Dr. Pablo Stoliar from University of Paris-Sud, Orsay, France, visited SCL from November 28 to 30, 2012, as a part of research activities on "Quantum critical transport near the Mott metal-insulator transition" bilateral project. Dr. Stoliar and his SCL host Darko Tanaskovic discussed possibilities of microscopical modeling of the resistive switching in narrow band Mott insulators.

Dr. Stoliar gave a talk on "Resistive Switching".

Abstract:
Resistive switching (RS) is becoming one of the promising candidates to substitute the standard memory technologies in a near future. It is also getting attention in the field of bio-inspired neuromorphic systems. RS -the physical effect behind the memristive phenomena- refers to the reversible change of the resistance of a nanometric-sized media by the application of electrical pulses (see http://www.scholarpedia.org/article/Resistive_switching). In this talk we will first introduce the RS topic, describing its physics, presenting some applications and discussing its relevance. Then, we will present our work, that let us understand the mechanisms behind RS in a specific family of narrow band Mott insulators.